npn silicon planar r.f. medium power transistor issue 2 ? march 94 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 55 v collector-emitter voltage v ceo v cer 30 55 v v emitter-base voltage v ebo 3.5 v continuous collector current i c 400 ma power dissipation p tot 1.5 w operating and storage temperature range t j :t stg -55 to +175 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 55 v i c =100 m a, i e =0 collector-emitter sustaining voltage v (br)ceo(sus) v (br)cer(sus) 30 55 v ic=5ma, i b =0 i c =5ma, r be =10 w emitter-base breakdown voltage v (br)ebo 3.5 v i e =100 m a,i c =0 collector-emitter cut-off current i ceo 20 m a v cb =45v collector-emitter saturation voltage v ce(sat) 1.0 v i c =100ma, i b .=20ma static forward current transfer h fe 15 i c =50ma, v ce =5v transitional frequency f t 500 800 mhz i c =25ma, v ce =15v f=100mhz output capacitance c obo 3.0 pf v ce =15v, i c =25ma f=100mhz r.f. power output p out 350 440 mw v cc =12v, p in =80mw f=400mhz efficiency h 50 70 % ZTX327 page no c b e e-line to92 compatible
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